The study of transparent conducting gallium doped ZnO thin films in order to use in solar cells
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Received date: June 7, 2018
Accepted date: July 17, 2018
Published date: July 28, 2018
https://doi.org/10.14419/ijpr.v6i2.13805
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Thin Films, Spray Pyrolysis, Structural, Optical, Electrical, Ga Doped ZnO. -
Abstract
In this study, transparent conducting Ga-doped ZnO thin films were deposited on glass substrate using chemical spray pyrolysis technique. The effect of Ga-doping concentration (0, 1, 2 and 3 at.%) on microstructural, optical and electrical characteristics of layers have been investigated. The studies of X-ray diffraction and optical transmission spectra show these films have a hexagonal wurtzite structure with (002) preferred growth direction, also a high transmission of 85-95% in visible range. Data analysis show that the band gap energies in these films are varying in the range of 3.27-3.33 eV, consistent with the Burstein-Moss shift effect, with Urbach tail widths between 114-160 meV. The 2 wt% Ga sample showed the maximum figure of merit (3×10-2Ω-1), with an electron concentration and sheet resistance of ~1.42×1019 cm-3 and 13 kΩ/square, respectively.
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How to Cite
Mahmoudzadeh Pirvahshi, M. (2018). The study of transparent conducting gallium doped ZnO thin films in order to use in solar cells. International Journal of Physical Research, 6(2), 56-59. https://doi.org/10.14419/ijpr.v6i2.13805Received date: June 7, 2018
Accepted date: July 17, 2018
Published date: July 28, 2018