Structural and microstructural study of SnS thin film semiconductor of 0.2

  • Abstract
  • Keywords
  • References
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  • Abstract

    SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consisting of Sn and S elements whose composition varied with increase in thickness. The SnS film of 0.4 μm thickness shows a more uniform grain distribution and growth with a crystal size of 60.57 nm and grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density hence allowing charge carriers to move freely in the lattice thereby causing a reduction in resistivity, increase in conductivity of the films and enhanced energy band gap which are essentially parameters for a semiconductor material for application in a field effect transistor.



  • Keywords

    Crystal Structure; Grain Boundaries; Scanning Electron Microscopy; Semiconductor; X-Ray Diffraction.

  • References

      [1] H. Du, Xi. Lin, Z. Xu, D. Chu, Electric double layer transistors: a review of recent progress, Journal of Material Science, 1-33. 50(2015) 5641-5673.

      [2] H. Yuan, H. Liu, H. Shimotani, Liquid gated ambipolar transport in ultrathin films of a topological insulator Bi2Te3. Nano letters, 11 (2011), 2601-2605.

      [3] T.S. Reddy, M.C. Kumar, Co-evaporated SnS thin films for visible light photodetector applications, Royal Society Advances. 6(2016), 95680-95692.

      [4] P. Thiruramanathan, G.S. Hikku, R. Krishna-Sharman, M. Siva Shakthi, Preparation and characterisation of indium doped SnS thin films for solar cell applications, Journal of Chemical Technology Research, 1(2015),59-65.

      [5] S.S. Hedge, A.G. Kunjomana, K.A. Chandrasekharam, K. Ramesh, M. Prashantha, Optical and electrical properties of SnS semiconductor crystals grown by physical vapour deposition technique, Physica B, 406, (2011), 1143-1148.

      [6] M. Miyasaka, T. Komatsu, W. Itoh, A. Yamaguchi, H. Ohshima, Effects of semiconductor thickness on poly-crysttalline silicon thin film transistor, Japanese journal of Applied Physics, 35(1), 1-2.

      [7] A. Sugaki, A. Kitakaze, H. Kitazawa, Sugaki, A., Kitakaze, A., & Kitazawa, H, Synthesized tin and tin-sulfide minerals; Synthetic sulfide minerals (XIII), Science Reports of the Tohoku University 16(3), 1985, 199–211.

      [8] T.H. Patel, Influence of deposition time on the structural and optical properties of chemically deposited SnS thin films, the open surface science journal, 4 (2012), 6-13.

      [9] B.J. Babu, A. Maldonado, S. Velumani, R. Asomoza, Electrical and Optical properties of Ultrasonically Sprayed Al-doped Zinc Oxide Thin Films, Material Science & Engineering B,10 (2010), 25-30.

      [10] I. Ilican, Y. Caglar, M. Caglar, Preparation and Characterization of ZnO Thin Films Deposited by Sol-gel spin coating method, Journal of Optoelectronics and Advanced Materials, 10(10), 2578-2583.

      [11] S.M. Ahmed, L.A. Latif, A.K. Salim, The effect of substrate temperature on the optical and structural properties of Tin sulphide thin films, Journal of Basrah research (sciences), 37(2011),1-6.

      [12] E. Guneri, F.Gode, C. Ulutas, F. Kirmizigul, G. Altindemir, C. Gumus, Properties of P-type SnS thin films prepared by chemical bath deposition, Chalcogenide letters, 7(2010),685-694.

      [13] J. Lv, Z. Zhou, F. Wang, C. Liu, W. Gong, J. Dai, X. Chen, G. He, S. Shi, X. Song, Z. Sun, F. Liu, Effect of annealing temperature and CuO on microstructure and optical band gap of CuxZn1-xO thin films, Super lattices and microstructures, 61(2013), 115-123.

      [14] M. Devika, N.R. Koteeswara, K. Ramesh, K.R. Gunasekhar, E.S.R. Gopal, R.K.T. Ramakrishna, R.K.T, Influence of annealing on the physical properties of evaporated SnS films, Semiconductor science and technology, 21(2006), 1125-1131.

      [15] A. Gomez, H. Martinez, M. Calixto-Rodriguez, D. Avellaneda, P.G. Reyes, O. Flores, A study of the structural, optical and electrical properties of SnS thin films modified by Plasma, Journal of materials science and engineering, 33 (6), 2013, 352-358.

      [16] P. Jain, P.Arun, Parameters influencing the optical properties of SnS thin films. Journal of semiconductors, 34 (2013), 1-6.

      [17] M. Safonova, P.P.K. Nair, E. Mellikov, R.Aragon, K. Kerm, R. Naidu, O. Volobujeva, Thermal annealing of sequentially deposited SnS thin films. Proceedings of the Estonian academy of sciences, 64(4), 2015, 488-494.

      [18] G.D. Deshmukh, S.M. Patil, S.S. Patil, P.H. Pawar, Effect of film thickness on structural and optical properties of Bi2Te3 thin films, Journal of chemical, biological and physical sciences: section c, 5(3), 2015, 2769-2779.

      [19] H. Jian, S. Cheng, X. Wu, Y. Yang, Effect of annealing temperature on electrical and optical properties of SnS:Ag thin films, Natural science, 2(2010), 197-200.

      [20] Y. Chen, I. Shih, Scaling down of organic thin film transistors: Short channel effects and channel length dependent field effect mobility, Journal of material science, 44 (2009) 280-284.

      [21] W.S. Rasband, ImageJ, National institute of health, Bethesda, Maryland, USA,

      [22] G. Julio, M.D. Merindano, M. Canals, M. Rallo, Image processing techniques to quantify micro projections on outer corneal epithelial cells, Journal of Anatomy, 212(2008), 879-886.

      [23] S.J. Ikhmayies, R.N. Ahmad-Bitar, The Influence of Substrate Temperature on the Photovoltaic properties of Spray-deposited CdS: In Thin Films, Applied Surface Science, 256 (2010), 3541-3545.




Article ID: 27700
DOI: 10.14419/ijpr.v7i1.27700

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