Melting point and microhardness of Cu2-II-IV-VI4 compounds

 
 
 
  • Abstract
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  • Abstract


    In the present study, we investigate the correlation between the melting point Tm and the microhardness H of some tetragonal and ortho-rhombic Cu2-II-IV-VI4 semiconducting compounds. After analyzing the experimental data of both Tm and H, we found that the melting point Tm of Cu2-II-IV-VI4 compounds correlates linearly with the microhardness H. With a coefficient of the correlation of around 0.98, the best fit was obtained using the linear model as follow: Tm = 175.54 H +792.27. The significance of the regression is given as the probability P of the null hypothesis (that there is no correlation) P < 0.0001, while the average error on the estimation of the melting point Tm was found only at around 1.54%. Our expression related Tm and H was used to predict the microhardness H of Cu2ZnSnS4 (CZTS) material. Our value (2.68 GPa) of H of CZTS deviates from the theoretical one (2.7 GPa) by only around 0.74%.


  • Keywords


    Cu2-II-IV-VI4 Semiconductors; Melting Point; Microhardness; Linear Correlation.

  • References


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Article ID: 31946
 
DOI: 10.14419/ijpr.v10i1.31946




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