Quasi-linear correlation between high-frequency and static die-lectric constants in II-VI and III-V semiconductors
-
2016-12-15 https://doi.org/10.14419/ijpr.v5i1.6961 -
Frequency and the Static Dielectric Constants, II-VI and III-V Semiconductors, Alkali Halides Compounds. -
Abstract
A quantitative form of the linear correlation between the high-frequency and static dielectric constants in ANB8-N (N = 2, 3) tetrahedrally coordinated semiconductor materials, and also in I-VII group alkali halides was studied. So, a quasi-linear relationship was found between the high-frequency and the static dielectric constants for some selected II-VI (ZnS, ZnSe, ZnTe and CdTe) and III-V (AlP, AlAs, AlSb,….etc) cubic zincblende type materials, in the other side a weak uphill linear relationship has been found in the case of I-VII (LiF, NaF, LiCl,….etc) group alkali halides compounds. In the case of II-VI and III-V cubic zincblende semiconductors, the linear regression is established with a correlation coefficient ( ) of about 0.98. The significance of the linear regression is given as the probability P <0.0001 of the null hypothesis.
-
References
[1] A. S. Verma, Naresh Pal, B K Sarkar, R Bhandari, V. K. Jindal, "Dielectric constants of zincblende semiconductors", Physica Scripta, Vol.85, No.1, (2012) pp. 015705 (4pp). and references cited therein. http://dx. doi:10.1088/0031-8949/85/01/015705.
[2] V. Kumar, V. Jha, A. K. Shrivastava, "Debye temperature and melting point of II-VI and III-V semiconductors", Crystal Research and Technology, Vol.45, No.9, (2010), pp. 920-924. http://dx.doi.org/ 10.1002/crat.201000268.
[3] D. S. Yadav, C. kumar, J. Sigh, Parashuram, G. Kumar, "Optoelectronic properties of zinc blende and wurtzite structured binary solids", Journal of Engineering and Computer Innovations, Vol.3, No.2, (2012), pp. 26-35. http://www.academicjournals.org/journal/ JECI/article-abstract/DC4DD528645. https://doi.org/10.5897/JECI12.005.
[4] A. S. Verma, B. K. Sarkar, V. K. Jindal, "Inherent properties of binary tetrahedral semiconductors", Physica B, Vol.45, (2010) pp. 1737-1739. http://dx.doi.org/10.1016/j.physb.2010.01.029.
[5] S. Adachi, Properties of Group-IV, III-V and II-VI Semiconductors, John Wiley & Sons, Chichester, (2005).
[6] S. Daoud, "Sound velocities and thermal properties of BX (X=As, Sb) compounds", International journal of scientific world, Vol.3, No.1, (2015), pp. 43-48. http://dx.doi.org/10.14419/ijsw.v3i1.4039.
[7] N. Paliwal, V. Srivastava, A. K. Srivastava, "Electronic band structure and heat capacity calculation of some TlX (X = Sb, Bi) compounds", Advances in materials physics and chemistry, Vol.6, (2016), pp. 47-53. http://dx.doi.org/10.4236/ampc.2016.63005.
[8] S. Daoud, N. Bioud, N. Lebgaa, R. Mezouar, "Optoelectronic and thermal properties of boron- bismuth compound", International Journal of Physical Research, Vol.2, No.2, (2014), pp. 27-31. http://dx.doi.org/10.14419/ijpr.v2i2.2760.
[9] S. Daoud, N. Bioud, "Structural properties of (B3) TlP under pressure", International Journal of Physical Research, Vol.2, No.2, (2014), pp. 50-55. http://dx.doi.org/10.14419/ijpr.v2i2.3100.
[10] S. Daoud,"Comment on†Structural phase transition, electronic and elastic properties in TlX (X = N, P, as) compounds: Pressure-induced effects" [Comput. Mater. Sci. 50 (2010) 203-210]", Computational Materials Science : Vol.111, (2016), pp. 532 – 533. http://dx.doi.org/10.1016/j.commatsci.2015.09.022.
[11] M. Ustundag, M. Aslan, Battal G. Yalcin, "The first-principles study on physical properties and phase stability of Boron-V (BN, BP, BAs, BSb and BBi) compounds", Computational Materials Science, Vol.81, (2014), pp. 471-477.
[12] A. Latreche, S. Daoud, "Modified expression for calculating refractive index of ANB8-N type binary semiconductors ", International Journal of Physical Research, Vol.4, No.2, (2016), pp. 48-51.
[13] B. Bouhafs, H. Aourag, M. Cartier, "Trends in band-gap pressure coefficients in boron compounds BP, BAs, and BSb", Journal of Physics: Condensed Matter, Vol.12, No.26, (2000), pp. 5655-5668. http://iopscience.iop.org/0953-8984/12/26/312. https://doi.org/10.1088/0953-8984/12/26/312.
[14] D. Varshney, G. Joshi, M. Varshney, S. Shriya, "Pressure induced mechanical properties of boron based pnictides", Solid State Sciences, Vol.12, No.5, (2010), pp. 864-872.
[15] Jasprit Singh, Electronic and Optoelectronic Properties of Semiconductor Structures, University of Michigan, Ann Arbor, Cambridge University Press, (2003).
[16] R.M. Lyddane, R.G. Sachs, E.Teller, "On the polar vibrations of alkali halides", Physical Review, Vol.59, No.8, (1941), pp. 673-676. http://journals.aps.org/pr/abstract/10.1103/PhysRev.59.673. https://doi.org/10.1103/PhysRev.59.673.
[17] A.S. Chaves, S.P.S. Porto, "Generalized Lyddane-Sachs-Teller relation", Solid State Communications, Vol.13, No.7, (1973), pp. 865-868. http://www.sciencedirect.com/science/article/pii/00381098739 03864.
[18] D. K. Kerry, Semiconductors, New York: Macmillan Publishing Company, USA, (1991). Print ISBN: 0-02-946519-2.
[19] E. Burstein, S. Perkowitz, M. Brodsky, "The dielectric properties of the cubic IV-VI compound semiconductors", Journal de Physique Colloques, (1968), 29(C4), pp.C4-78-C4-83. And references cited therein. https://hal.archives-ouvertes.fr/jpa-00213615.
-
Downloads
-
How to Cite
Daoud, S., Bencheikh, A., & Belagraa, L. (2016). Quasi-linear correlation between high-frequency and static die-lectric constants in II-VI and III-V semiconductors. International Journal of Physical Research, 5(1), 4-6. https://doi.org/10.14419/ijpr.v5i1.6961Received date: 2016-11-16
Accepted date: 2016-12-09
Published date: 2016-12-15