Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics

  • Authors

    • S.B. Rybalka Bryansk State Technical University
    • E.Yu. Krayushkina
    • A.A. Demidov
    • O.A. Shishkina
    • B.P. Surin
    2017-01-11
    https://doi.org/10.14419/ijpr.v5i1.7065
  • 4H-Sic, Schottky Diode, Silicon Carbide, Thermionic Emission, Simulation.

  • Abstract

    Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal†diode with average ideality factor n»1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.

  • References

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  • How to Cite

    Rybalka, S., Krayushkina, E., Demidov, A., Shishkina, O., & Surin, B. (2017). Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics. International Journal of Physical Research, 5(1), 11-13. https://doi.org/10.14419/ijpr.v5i1.7065

    Received date: 2016-12-07

    Accepted date: 2017-01-01

    Published date: 2017-01-11