Optical properties and electronic polarizability of boron-antimonide semiconductor

  • Authors

    • Salah Daoud
    • Abdelhakim Latreche
    2017-08-06
    https://doi.org/10.14419/ijpr.v5i2.7910
  • High-Frequency and Static Dielectric Constants, BSB Semiconductor Material, Cubic Zincblende Binary Compounds.
  • The high-frequency and static dielectric constants, the reflex index, the total optical electronegativity difference, the bulk modulus, the micro-hardness, the plasmon energy and the electronic polarizability of cubic zincblende boron-antimonide semiconductor have been estimated by using some empirical formulas. These parameters are analyzed by comparing them against the available experimental and theoretical data. In general, our obtained results agree well with other theoretical data from the literature.

  • References

    1. [1] A. S. Verma, Naresh Pal, B K Sarkar, R Bhandari, and V. K. Jindal, "Dielectric constants of zincblende semiconductors", Physica Scripta, Vol.85, No.1, (2012) pp. 015705 (4pp). and references cited therein. https://doi.org/10.1088/0031-8949/85/01/015705.
      [2] D. S. Yadav, C. kumar, J. Sigh, Parashuram, and G. Kumar, "Optoelectronic properties of zinc blende and wurtzite structured binary solids", Journal of Engineering and Computer Innovations, Vol.3, No.2, (2012), pp. 26-35. http://www.academicjournals.org/journal/ JECI/article-abstract/DC4DD528645. https://doi.org/10.5897/JECI12.005.
      [3] A. S. Verma, B. K. Sarkar, and V. K. Jindal, "Inherent properties of binary tetrahedral semiconductors", Physica B, Vol.45, (2010) pp. 1737-1739. https://doi.org/10.1016/j.physb.2010.01.029.
      [4] B. Bouhafs, H. Aourag and M. Cartier, "Trends in band-gap pressure coefficients in boron compounds BP, BAs, and BSb", Journal of Physics: Condensed Matter, Vol. 12, No.26, (2000), pp. 5655-5668. https://doi.org/10.1088/0953-8984/12/26/312.
      [5] S. Daoud, N. Bioud, N. Lebgaa, L. Belagraa and R. Mezouar, " Pressure effect on structural, elastic and electronic properties of (B3) BSb compound ", Indian journal of physics, Vol. 87, No.4, (2013), pp. 355-362. https://link.springer.com/article/10.1007/ s12648-012-0231-y.
      [6] S. Daoud, " Empirical study of elastic properties of BX (X = As, Sb) materials ", International journal of scientific world, Vol.3, No.1, (2015), pp. 37-42. https://doi.org/10.14419/ijsw.v3i1.4022.
      [7] S. Daoud, "Sound velocities and thermal properties of BX (X=As, Sb) compounds", International journal of scientific world, Vol.3, No.1, (2015), pp. 43-48. https://doi.org/10.14419/ijsw.v3i1.4039.
      [8] S. Daoud, A. Bencheikh, and L. Belagraa, "Quasi-linear correlation between high-frequency and static dielectric constants in II-VI and III-V semiconductors ", International Journal of Physical Research, Vol. 5, No.1, (2014), pp. 4-6. https://doi.org/10.14419/ijpr.v5i1.6961.
      [9] Y. Yao, D. König, and M. Green, "Investigation of boron antimonide as hot carrier absorber material ", Solar Energy Materials and Solar Cells, Vol. 111, (2014), pp. 123-126. https://doi.org/10.1016/j.solmat.2012.12.029
      [10] S. N. Das, R. Bhunia, S. Hussain, R. Bhar, B.R. Chakraborty, A.K. Pal, "Synthesis and characterization of boron antimonide films by pulsed laser deposition technique", Applied Surface Science, Vol. 353, (2015), pp. 439- 448. http://dx.doi.org/10.1016/j.apsusc. 2015.06.157.
      [11] A. Zaoui, S. Kacimi, A. Yakoubi, B. Abbar, and B. Bouhafs, Optical properties of BP, BAs and BSb compounds under hydrostatic pressure, Physica B, Vol. 367, No. 1-4, (2005), pp. 195-204. https://doi.org/10.1016/j.physb.2005.06.018.
      [12] S. Labidi, H. Meradji, S. Ghemid, S. Meçabih, B. Abbar, " Pressure dependence of electronic and optical properties of zincblende BP, BAs and BSb compounds", Journal of Optoelectronics and Ad-vanced Materials, Vol. 11, No. 7, (2009), pp. 994 - 1001. http://joam.inoe.ro/index.php?option=magazine&op=view&idu=19 89&catid=40.
      [13] S H.A. Badehian, H. Salehi, " Ab-initio study of the structural, electronic and optical properties of BSb (110) and (100) surfaces", Surface Science, Vol.628, (2014), pp. 1-7. https://doi.org/10.1016/j.susc.2014.05.002.
      [14] D. Touat, M. Ferhat and A. Zaoui, "Dynamical behaviour in the boron III-V group: a first-principles study", Journal of Physics: Condensed Matter, Vol. 18, No. 15, (2006), pp. 3647-3654. https://doi.org/10.1088/0953-8984/18/15/011.
      [15] K. Bouamama, P. Djemia, N. Lebgaa and K. Kassali, "Ab initio calculation of the lattice dynamics of the Boron group-V compounds under high pressure", High Pressure Research, Vol. 27, No. 2 (2007), pp. 269 -277. http://dx.doi.org/10.1080/0895795070 1265359.
      [16] S. Cui, W. Feng, H. Hu, Z. Feng, "First-principles study on the boron antimony compound", Physica Status Solidi (B), Vol. 246, No.1, (2009), pp. 119-123. http://dx.doi.org/10.1002/pssb. 200844010.
      [17] R.R. Reddy, K. Rama Gopal, K. Narasimhulu, L. Siva Sankara Reddy, K. Raghavendra Kumar, G. Balakrishnaiah, and M. Ravi Kumar, "Interrelationship between structural, optical, electronic and elastic properties of materials", Journal of Alloys and Compounds, Vol. 473, (2009), pp. 28-35. http://dx.doi.org/10.1016/j.jallcom. 2008.06.037.
      [18] M. Anani, C. Mathieu, S. Lebid, Y. Amar, Z. Chama and H. Abid, "Model for calculating the refractive index of a III-V semiconductor", Computational Materials Science, Vol.41, No.4, (2008), pp. 570-575. https://doi.org/10.1016/j.commatsci.2007.05.023.
      [19] S. Daoud, N. Bioud, N. Lebgaa, and R. Mezouar, "Optoelectronic and thermal properties of boron- bismuth compound", International Journal of Physical Research, Vol.2, No.2, (2014), pp. 27-31. https://doi.org/10.14419/ijpr.v2i2.2760.
      [20] R. R. Reddy, Y. Nazeer Ahammed, P. Abdul Azeem, K. Rama Gopal, B. Sasikala Devi, and T. V. R. Rao, "Dependence of Physical Parameters of Compound Semiconductors on Refractive Index", Defense Science Journal, Vol. 53, No. 3, (2003), pp. 239-248. http://www.publications.drdo.gov.in/ojs/index.php/dsj/article/view/2272. https://doi.org/10.14429/dsj.53.2272.
      [21] V. P. Shaileshkumar, "Application of pseudopotential theory to certain binary, ternary and quaternary semiconductors," Thesis of Doctor of Philosophy in Physics, Sardar Patel University, India (January- 2012). http://hdl.handle.net/10603/7350.
      [22] A. S. Verma, "Electronic and Optical Properties of Rare-earth Chalcogenides and Pnictides", African Physical Review, Vol.3, (2009), pp. 11-20. www.aphysrev.org/index.php/aphysrev/article/ download/.../151.
      [23] S. Daoud, " Comment on: Ab initio calculations of B2 type RHg (R = Ce, Pr, Eu and Gd) intermetallic compounds", The European Physical Journal B, Vol.89, (2016) 47 (2pp). https://link.springer. com /article /10.1140/epjb/e2016-60844-9.
      [24] S. Daoud, "Comment on ‘The effect of pressure on the physical properties of Cu3N", Physica Scripta. Vol. 91, (2016) 057001 (2pp). http://iopscience. iop.org/1402-4896/91/5/057001.
      [25] S. Daoud and A. Latreche, "Comment on Density functional investigation on electronic structure and elastic properties of BeX at high pressure", Indian journal of physics, Vol. 90, No.11, (2016), pp. 1243-1244. http://www.readcube.com/articles/10.1007/s12648-016-0863-4. https://doi.org/10.1007/s12648-016-0863-4.
      [26] A. S. Verma, R. K. Singh & S. K. Rathi, "An empirical model for dielectric constant and electronic polarizability of binary (ANB8− N ) and ternary (ANB2+ NC2 7− N) tetrahedral semiconductors", Journal of Alloys and Compounds, Vol. 486, No. 1-2, (2009), pp. 795-800. https://doi.org/10.1016/j.jallcom.2009.07.067.

  • Downloads

  • How to Cite

    Daoud, S., & Latreche, A. (2017). Optical properties and electronic polarizability of boron-antimonide semiconductor. International Journal of Physical Research, 5(2), 43-45. https://doi.org/10.14419/ijpr.v5i2.7910