RYBALKA, S.B.; KRAYUSHKINA, E.Yu.; DEMIDOV, A.A.; SHISHKINA, O.A.; SURIN, B.P. Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics. International Journal of Physical Research, [S. l.], v. 5, n. 1, p. 11–13, 2017. DOI: 10.14419/ijpr.v5i1.7065. Disponível em: https://sciencepubco.com/index.php/IJPR/article/view/7065.. Acesso em: 21 nov. 2024.