Latreche, Abdelhakim. “Reverse Bias-Dependence of Schottky Barrier Height on Silicon Carbide: Influence of the Temperature and Donor Concentration”. International Journal of Physical Research 2, no. 2 (August 11, 2014): 40–49. Accessed April 28, 2024. https://sciencepubco.com/index.php/IJPR/article/view/3120.