Rybalka S, Krayushkina E, Demidov A, Shishkina O, Surin B. Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics. IJPR [Internet]. 2017 Jan. 11 [cited 2024 Nov. 24];5(1):11-3. Available from: https://sciencepubco.com/index.php/IJPR/article/view/7065