Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors
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2015-11-16 https://doi.org/10.14419/ijsw.v3i2.5314 -
Debye Temperature, Melting Point, AII-BVI and AIII-BV Binary Compounds, Bond Length. -
Abstract
Simple empirical expressions between the Debye temperature and the bond length and also between the melting point and the bond length have been proposed. These formulas have been established for two groups of ANB8-N type binary semiconductors (groups: II-VI and III-V). A good correlation between the Debye temperature and the bond length and also between the melting point and the bond length is obtained. The minimum average percentage deviations in the present approach reveal that our model proves its identity and soundness compared to those of other author relations.
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References
[1] H. Siethoff, "Debye temperature, self-diffusion and elastic constants of intermetallic compounds", Intermetallics, Vol. 5, No. 8, (1997), pp. 625-632. http://www.sciencedirect.com/science/article/pii/S096697959700037X. http://dx.doi.org/10.1016/S0966-9795(97)00037-X.
[2] V. Kumar, V. Jha & A. K. Shrivastava, "Debye temperature and melting point of II-VI and III-V semiconductors", Crystal Research and Technology, Vol. 45, No. 9, (2010), pp. 920-924. http://www. onlinelibrary.wiley.com/doi/10.1002/crat.201000268/pdf. http://dx.doi.org/10.1002/crat.201000268.
[3] A. Bahadur & M. Mishra, "Correlation between refractive index and electronegativity difference for ANB8-N type binary semiconductors", Acta Physica Polonica A, Vol. 123, No. 4, (2013), pp. 737-740. http://przyrbwn.icm.edu.pl/APP/PDF/123/a123z4p18.pdf. http://dx.doi.org/10.12693/APhysPolA.123.737.
[4] S. Adachi, "Properties of Group-IV, III-V and II-VI Semiconductors", John Wiley & Sons, England, (2005). Print ISBN: 9780470090329. Online ISBN: 9780470090343. http://dx.doi.org/10.1002/0470090340.
[5] A. S. Verma, B. K. Sarkar & V. K. Jindal "Inherent properties of binary tetrahedral semiconductors", Physica B, Vol. 405, (2010), pp. 1737-1739. http://www.sciencedirect.com/science/article/pii/S0921452610000396. http://dx.doi.org/10.1016/j.physb.2010.01.029.
[6] S. Daoud, "Sound velocities and thermal properties of BX (X=As, Sb) compounds", International journal of scientific world, Vol. 3, No. 1, (2015), pp. 43-48. http://www.sciencepubco.com/index.php/IJSW/article/view/4039. http://dx.doi.org/10.14419/ijsw.v3i1.4039.
[7] S. Daoud, N. Bioud, N. Lebgaa & R. Mezouar "Optoelectronic and thermal properties of boron- bismuth compound", International Journal of Physical Research", Vol. 2, No. 2, (2014), pp. 27-31. http://www.sciencepubco.com/index.php/IJPR/article/view/2760. http://dx.doi.org/10.14419/ijpr.v2i2.2760.
[8] M. Ustundag, M. Aslan, & Battal G. Yalcin, "The first-principles study on physical properties and phase stability of Boron-V (BN, BP, BAs, BSb and BBi) compounds", Computational Materials Science, Vol. 81, (2014) pp. 471- 477.
[9] V. Kumar, A. K. Shrivastava, R. Banerji, & D. Dhirhe, "Debye temperature and melting point of ternary chalcopyrite semiconductors", Solid State Communications, Vol. 146, No. 25-26, (2009), pp. 1008-1011. http://www.sciencedirect.com/science/article/pii/S0038109809002026. http://dx.doi.org/10.1016/j.ssc.2009.04.003.
[10] S. K. Gorai & P. Mahto, "Plasmon energy and lattice energy of binary tetrahedral semiconductors and I-VII ionic compounds", Indian Journal of Physics, Vol.86, No.4, (2012), pp. 273-277. http://www.link.springer.com/content/pdf/10.1007%2Fs12648-012-0053-y.pdf. http://dx.doi.org/10.1007/s12648-012-0053-y.
[11] E. V. Clougherty & L. Kaufman, "Thermodynamic study of synthesis of new compound phases under high pressure", Scientific Report N.1, Cambridge, Massachusetts, 1967. www.dtic.mil/cgi-bin/GetTRDoc?AD=AD0670561.
[12] A. S. Verma, R. K. Singh & S. K. RathiV, "Thermal property of binary tetrahedral semiconductors", Physica B, Vol. 404, No. 21, (2009), pp. 4051-4053. http://www.sciencedirect.com/science/article/pii/S0921452609006681. http://dx.doi.org/10.1016/j.physb.2009.07.157.
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How to Cite
Daoud, S. (2015). Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors. International Journal of Scientific World, 3(2), 275-279. https://doi.org/10.14419/ijsw.v3i2.5314Received date: 2015-09-11
Accepted date: 2015-11-09
Published date: 2015-11-16