Modelling silicon etching using inverse methods

  • Authors

    • Eric Kincanon Gonzaga University
    2022-02-19
    https://doi.org/10.14419/ijamr.v11i1.31930
  • Inverse Scattering, Gelfand-Levitan Equation, Reflection Coefficient, One-Dimensional Scattering.

  • Abstract

    This paper considers a real-world application of a recently presented alternative form of the Gelfand-Levitan equation. Here is considered the case of potential in the plasma above silicon during the etching process. It is shown that although standard methods have significant challenges, the alternative form of the Gelfand-Levitan equation gives a straightforward way to determine the reflection coefficient from an assumed potential.

     

     

  • References

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  • How to Cite

    Kincanon, E. (2022). Modelling silicon etching using inverse methods. International Journal of Applied Mathematical Research, 11(1), 8-10. https://doi.org/10.14419/ijamr.v11i1.31930

    Received date: 2022-01-11

    Accepted date: 2022-02-02

    Published date: 2022-02-19