A Study on Electrical Characterization of Surface Potential and Threshold Voltage for Nano Scale FDSOI MOSFET

  • Authors

    • Chandra Shakher Tyagi
    • R L. Sharma
    • Prashant Mani
    2018-07-20
    https://doi.org/10.14419/ijet.v7i3.12.16031
  • Nano scale, Short-channel effects, silicon- on-insulator (SOI), channel length, 3-D, surface potential, MOSFET, Threshold voltage.

  • Abstract

    In this paper the study of electrical characterization of Surface potential & Vth threshold-voltage model is developed for FD SOI MOSFET. The threshold voltage is important parameter in device design. Scaling of device has positive impact on device performance. The various parameters like thickness of silicon film, oxide layer, drain to source voltage plays a key role in improvement of device performance. Surface potential explain the distribution of applied potential throughout the channel. We also analyzed the effect of threshold voltage with various electrical parameters.

     

     

     

  • References

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  • How to Cite

    Shakher Tyagi, C., L. Sharma, R., & Mani, P. (2018). A Study on Electrical Characterization of Surface Potential and Threshold Voltage for Nano Scale FDSOI MOSFET. International Journal of Engineering & Technology, 7(3.12), 232-234. https://doi.org/10.14419/ijet.v7i3.12.16031

    Received date: 2018-07-22

    Accepted date: 2018-07-22

    Published date: 2018-07-20