The Effect of Heater Layer (SiC) Thickness for Phase-change Memory Phase Transition

  • Authors

    • M. S. Aziz
    • F. H. M.Fauzi
    • Z. Mohamad
    • R. I. Alip
    2018-11-27
    https://doi.org/10.14419/ijet.v7i4.18.25258
  • GST, Heater layer, low power consumption of PCM, Phase change memory, Separate heater structure, Silicon carbide

  • The phase transition of germanium antimony tellurium (GST) using different thickness of heater layer (Silicon Carbide, SiC) was investigated. The separate heater structure of phase change memory (PCM) was selected as a model simulation. However, there is little information about this structure that deal with the low power consumption of PCM. This structure has a potential to achieve the low power consumption of PCM with using the different thickness of heater layer (SiC). From the simulation, the effect of heater layer (SiC) thickness on the PCM was studied by COMSOL Multiphysic 5.0 software. The temperature of GST and phase transition of GST can be obtained from the simulation. The 20nm thickness of SiC can reach the crystalline temperature at 1.2V with 100 ns pulse width. The 100nm thickness of SiC can reach the crystalline temperature at 0.8V with 100ns pulse width. From these results, the thickness of SiC can affect the temperature of GST and phase transition of GST. If the thickness of SiC was increased, the temperature of GST was increased and the rate of phase transition of GST was faster. It can be concluded that the thickness of SiC may have been an important factor in the transformation of GST’s phase and the temperature of GST. The low power consumption of PCM can be produced when the thickness of SiC is considered.

     

     

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  • How to Cite

    S. Aziz, M., H. M.Fauzi, F., Mohamad, Z., & I. Alip, R. (2018). The Effect of Heater Layer (SiC) Thickness for Phase-change Memory Phase Transition. International Journal of Engineering & Technology, 7(4.18), 464-467. https://doi.org/10.14419/ijet.v7i4.18.25258