Measurement Methods Effects on the Swithing Behaviour of Sputtered Titania Thin Films

  • Authors

    • Nur Syahirah Kamarozaman
    • Sukreen Hana Herman
    • Raudah Abu Bakar
    • Muhammad Uzair Shamsul
    • Norhidayatul Hikmee Mahzan
    • Shaiful Bakhtiar Hashim
    2018-12-29
    https://doi.org/10.14419/ijet.v7i4.42.25715
  • Memristive behaviour, titania thin films, measurement methods, sputtering method

  • The paper presents the issues regarding on the effect of measurement methods to the memristive behaviour to get a reliable and repeatable data. The measurement methods include the measurement cycles and different direction of bias voltage applied to the sample. A one layer of titania thin films was deposited sandwiched between Pt and ITO substrate to form metal-insulator-metal (MIM) structure which is the fundamental structure of memristive device. The oxygen flow rate was varied to 10, 20 and 30% during deposition process of sputtering method. The measurement cycles was repeated for three times. It was found that the device with thinner film required lesser time to get a repeatable I-V curve compared to the device with thicker film. The memristive behaviour is depended on ions movement either positively charged oxygen vacancies or negatively charged excess of oxygen ions. Thus, starting the voltage sweeps either positive or negative voltage applied to the sample is studied in this work. The oxygen vacancies movement in the active layer is proposed.

     

     

  • References

    1. [1] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing memristor found,†Nature, vol. 453, pp. 80–83, 2008.

      [2] R. Williams, "How We Found The Missing Memristor," IEEE Spectrum, vol. 45, pp. 28-35, 2008.

      [3] B. Hayes, "The Memristor," American Scientist, vol. 99, pp. 106-110, 2011.

      [4] R. Gharpinde, P. L. Thangkhiew, K. Datta and I. Sengupta, "A Scalable In-Memory Logic Synthesis Approach Using Memristor Crossbar," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 26, no. 2, pp. 355-366, Feb. 2018, 10.1109/TVLSI.2017.2763171.

      [5] Y.P. Santos, E. Valença, R. Machado, M.A. Macêdo, “A novel structure ZnO-Fe-ZnO thin film memristorâ€, Materials Science in Semiconductor Processing, Volume 86, 2018.

      [6] O. Kavehei, C. Kyoungrok, L. Sangjin, K. Sung-Jin, S. Al-Sarawi, D. Abbott, and K. Eshraghian, "Fabrication and Modeling of Ag/TiO2/ITO Memristor," in IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS), 2011, pp. 1-4

      [7] M. N. Awais, N. M. Muhammad, D. Navaneethan, H. C. Kim, J. Jo, and K. H. Choi, "Fabrication of ZrO2 Layer Through Electrohydrodynamic Atomization for the Printed Resistive Switch (Memristor)," Microelectronic Engineering, vol. 103, pp. 167-172, 2013.

      [8] Z. Aznilinda, S. H. Herman, and M. Rusop, "Physical characteristic of room-temperature deposited TiO2 thin films by RF magnetron sputtering at different RF power," in Humanities, Science and Engineering Research (SHUSER), 2012 IEEE Symposium on, 2012, pp. 685-689.

      [9] Bessonov, Alexander & N Kirikova, Marina & Petukhov, Dmitrii & Allen, Mark & Ryhänen, Tapani & Bailey, Marc. (2014). Layered memristive and memcapacitive switches for printable electronics. Nature Material. 14. 10.1038/nmat4135.

      [10] Abunahla, Heba & Mohammad, Baker & Homouz, Dirar & O'Kelly, Curtis. (2016). Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects. IEEE Transactions on Circuits and Systems I: Regular Papers. pp. 1-10. 10.1109/TCSI.2016.2622225.

      [11] Q. Xia, "Nanoscale memristors: Devices engineering, CMOS integration and novel applications," 2015 IEEE International Conference on Digital Signal Processing (DSP), Singapore, 2015, pp. 1216-1218.doi: 10.1109/ICDSP.2015.7252073.

      [12] Stathopoulos, S., Khiat, A., Trapatseli, M., Cortese, S., Serb, A., Valov, I., & Prodromakis, T. (2017). Multibit memory operation of metal-oxide bi-layer memristors. Scientific Reports, 7, 17532. http://doi.org/10.1038/s41598-017-17785-1.

      [13] T. J. Dai, L. X. Qian, Y. X. Ren and X. Z. Liu, "MoO3−x-based bipolar switching ReRAM fabricated by atomic layer deposition," 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hsinchu, 2017, pp. 1-2. doi: 10.1109/EDSSC.2017.8126436

      [14] Pi, Shuang & Lin, Peng & Xia, Qiangfei. (2016). Fabrication of sub-10 nm metal nanowire arrays with sub-1 nm critical dimension control. Nanotechnology. 27. 464004. 10.1088/0957-4484/27/46/464004.

      [15] Kerr Barnes, Benjamin & Das, Kausik. (2018). Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films. Scientific Reports. 8. 10.1038/s41598-018-20598-5.

      [16] S. B. Lee, H. K. Yoo, K. Kim, J. S. Lee, Y. S. Kim, S. Sinn, D. Lee, B. S. Kang, B. Kahng, and T. W. Noh, "Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices," Nanotechnology, vol. 23, p. 315202(9pp), 2012.

      [17] L. L. Wei, D. S. Shang, J. R. Sun, S. B. Lee, Z. G. Sun, and B. G. Shen, "Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems," Nanotechnology, vol. 24, p. 325202 (7pp), 2013.

      [18] J. Joshua Yang, Feng Miao, Matthew D Pickett, Douglas A A Ohlberg, Duncan R Stewart, Chun Ning Lau, and R. S. Williams, "The Mechanism of Electroforming of Metal Oxide Memristive Switches," Nanotechnology, vol. 20, 2009.

      [19] R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-Based Resistive Switching Memories –Nanoionic Mechanisms, Prospects, and Challenges," Adv. Mater., vol. 21, pp. 2632–2663, 2009.

  • Downloads

  • How to Cite

    Syahirah Kamarozaman, N., Hana Herman, S., Abu Bakar, R., Uzair Shamsul, M., Hikmee Mahzan, N., & Bakhtiar Hashim, S. (2018). Measurement Methods Effects on the Swithing Behaviour of Sputtered Titania Thin Films. International Journal of Engineering & Technology, 7(4.42), 207-209. https://doi.org/10.14419/ijet.v7i4.42.25715