Design of Low Noise Amplifier for WLAN using pHEMT

 
 
 
  • Abstract
  • Keywords
  • References
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  • Abstract


    The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.

     

     


  • Keywords


    Impedance Matching; LNA Design; Maximum Gain; Noise Figure; PHEMT.

  • References


      [1] Avinash vikram N. (2017) ‘Low Power CMOS LNA and Mixer Design’IOSR Journal of Electronic and Communication Engineering, Vol. 1, Issue 4, pp.350-358.https://doi.org/10.9790/2834-0144650.

      [2] Hashemi H. and Hajimiri A. (2017) ‘Concurrent multiband low-noise amplifiers theory, design, and applications’ IEEE Trans. Microw. Theory Tech., vol. 50, pp. 288–301.https://doi.org/10.1109/22.981282.

      [3] Makesh iyer N. (2017) ‘LNA Design for WLAN Applications’ IEEE International Conference on Circuits and systems, pp.23-45.https://doi.org/10.1109/ICCS1.2017.8326013.

      [4] Malathi D and Gomathi M (2019), “Design of inductively degenerated common source RF CMOS Low Noise Amplifier”, Sadhana (2019), Indian Academy of Sciences. https://doi.org/10.1007/s12046-018-1017-5.

      [5] Mohammad Fallahnejad (2015) ‘Design and Simulation of Low Noise Amplifier at 10 GHz By Using GaAs High Electron Mobility Transistor’, IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE), Vol. 10, Issue 5 Ver., pp. 26-45.

      [6] Data sheet: 2-18 GHz Ultra Low noise Pseudomorphic HEMT.

      [7] Sritoma Paul, Shubham Mondal and Angsuman Sarkar (2018), “A novel GaN-HEMT based inverter and cascode Amplifier”, IEEE Electron Device Kolkata Conference (EDKCON), 24-25 November 2018, Kolkata, India, pp 465-469.https://doi.org/10.1109/EDKCON.2018.8770510.

      [8] Parkavi N. and Ravi T (2016), “Design and analysis of RF low noise and high gain amplifier for wireless communication”, ARPN Journal of Engineering and Applied Sciences, VOL. 11, NO. 19, OCTOBER 2016, ISSN 1819-6608.

      [9] Arpit Kumar and Nagendra Prasad Pathak (2014), “Design and Characterization of a Wideband p-HEMT Low Noise Amplifier”, 2014 International Conference on Advances in Computing,Communications and Informatics (ICACCI), IEEE.https://doi.org/10.1109/ICACCI.2014.6968527.

      [10] D.M.Pozar, Microwave Engineering-3rd Edition,Wiley India Pvt. Limited, 2007.


 

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Article ID: 30051
 
DOI: 10.14419/ijet.v9i2.30051




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