[1]
Satyanarayana, B.V.V. and Durga Prakash, M. 2018. Design and Analysis of Heterojunction Tunneling Transistor (HETT) based Standard 6T SRAM Cell. International Journal of Engineering & Technology. 7, 3.29 (Aug. 2018), 8–11. DOI:https://doi.org/10.14419/ijet.v7i3.29.18450.