Yu.Drakin, A. et al. 2018. Calculation of 4H-SiC Schottky Diode with Breakdown Voltage Up to 3 KV. International Journal of Engineering & Technology. 7, 4.36 (Dec. 2018), 1012–1019. DOI:https://doi.org/10.14419/ijet.v7i4.36.24942.