YU.DRAKIN, A.; B. RYBALKA, S.; A. DEMIDOV, A. Calculation of 4H-SiC Schottky Diode with Breakdown Voltage Up to 3 KV. International Journal of Engineering & Technology, [S. l.], v. 7, n. 4.36, p. 1012–1019, 2018. DOI: 10.14419/ijet.v7i4.36.24942. Disponível em: https://sciencepubco.com/index.php/ijet/article/view/24942.. Acesso em: 25 nov. 2024.