Yu.Drakin A, B. Rybalka S, A. Demidov A. Calculation of 4H-SiC Schottky Diode with Breakdown Voltage Up to 3 KV. IJET [Internet]. 2018 Dec. 9 [cited 2024 Nov. 25];7(4.36):1012-9. Available from: https://sciencepubco.com/index.php/ijet/article/view/24942